IXER60N120

new-10%

Manufacturer part number:IXER60N120

Manufacturer:IXYS

Description:IXYS SEMICONDUCTOR IXER60N120 IGBT Single Transistor, 95 A, 2.1 V, 375 W, 1.2 kV, ISOPLUS-247, 3 Pins

Case Package:SOT-23

Datasheet:IXER60N120 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS247™
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
JESD-609 Code	e1
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	375W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Polarity	NPN
Element Configuration	Single
Power Dissipation	375W
Case Connection	ISOLATED
Input Type	Standard
Transistor Application	POWER CONTROL
Rise Time	50ns
Collector Emitter Voltage (VCEO)	2.7V
Max Collector Current	95A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.1V
Turn On Time	130 ns
Test Condition	600V, 60A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 60A
Turn Off Time-Nom (toff)	710 ns
IGBT Type	NPT
Gate Charge	350nC
Switching Energy	7.2mJ (on), 4.8mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant