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STGWA30H60DFB

STGWA30H60DFB

STGWA30H60DFB

STMicroelectronics

STGWA30H60DFB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGWA30H60DFB Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~175°C TJ
Series HB
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGWA30
Input Type Standard
Power - Max 260W
Reverse Recovery Time 53ns
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 60A
Test Condition 400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
IGBT Type Trench Field Stop
Gate Charge 149nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 37ns/146ns
Switching Energy 383μJ (on), 293μJ (off)
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
600 $2.11427 $1268.562
STGWA30H60DFB Product Details

STGWA30H60DFB Description 


The STGWA30H60DFB is an IGBT developed using an advanced proprietary trench gate field stop structure. 



STGWA30H60DFB Features


  • Maximum junction temperature: TJ = 175 °C

  • High-speed switching series

  • Minimized tail current

  • Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A

  • Tight parameter distribution

  • Safe paralleling

  • Positive VCE(sat) temperature coefficient

  • Low thermal resistance

  • Very fast soft recovery antiparallel diode



STGWA30H60DFB Applications


  • Photovoltaic inverters

  • High-frequency converters


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