Name: IRGP30B60KD-EP
Brand: Infineon Technologies
SKU: IRGP30B60KD-EP
Availability: InStock

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IRGP30B60KD-EP

Manufacturer part number:IRGP30B60KD-EP

Manufacturer:Infineon Technologies

Description:IRGP30B60KD-EP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRGP30B60KD-EP Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	304W
Current Rating	60A
Number of Elements	1
Element Configuration	Single
Power Dissipation	304W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	46 ns
Transistor Application	MOTOR CONTROL
Rise Time	28ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	185 ns
Collector Emitter Voltage (VCEO)	2.35V
Max Collector Current	60A
Reverse Recovery Time	125 ns
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.35V
Turn On Time	74 ns
Test Condition	400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.35V @ 15V, 30A
Turn Off Time-Nom (toff)	237 ns
IGBT Type	NPT
Gate Charge	102nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	46ns/185ns
Switching Energy	350μJ (on), 825μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
Fall Time-Max (tf)	42ns
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

IRGP30B60KD-EP Product Details

IRGP30B60KD-EP Description

IRGP30B60KD-EP is a 600v Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. The transistor IRGP30B60KD-EP provides benchmark efficiency for motor control, and excellent current sharing in Parallel Operation. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRGP30B60KD-EP is in the TO-247AD package with 304w Power Dissipation.