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SIGC25T60SNCX1SA2

SIGC25T60SNCX1SA2

SIGC25T60SNCX1SA2

Infineon Technologies

SIGC25T60SNCX1SA2 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

SIGC25T60SNCX1SA2 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 17 Weeks
Mounting Type Surface Mount
Package / Case Die
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Published 2005
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Position UPPER
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-XUUC-N3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Input Type Standard
Transistor Application POWER CONTROL
Drain to Source Voltage (Vdss) 600V
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Dual Supply Voltage 600V
Current - Collector (Ic) (Max) 30A
Turn On Time 78 ns
Test Condition 400V, 30A, 11 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 30A
Turn Off Time-Nom (toff) 391 ns
IGBT Type NPT
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 44ns/324ns
RoHS Status ROHS3 Compliant
SIGC25T60SNCX1SA2 Product Details

SIGC25T60SNCX1SA2 Description


GATE BIPOLAR TRANSISTOR WITH INSULATION



SIGC25T60SNCX1SA2 Features


  • NPT 600V technology

  • 100μm chip

  • Short-circuit evidence

  • The temperature coefficient is positive.

  • simple paralleling



SIGC25T60SNCX1SA2 Applications


Drives


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