IXGT30N60B

new-10%

Manufacturer part number:IXGT30N60B

Manufacturer:IXYS

Description:Trans IGBT Chip N-CH 600V 60A 3-Pin(2+Tab) TO-268AA

Case Package:SOT-23

Datasheet:IXGT30N60B Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins	3
Weight	4.500005g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	HiPerFAST™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	200W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*30N60
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	200W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	60A
Collector Emitter Breakdown Voltage	600V
Turn On Time	25 ns
Test Condition	480V, 30A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 30A
Turn Off Time-Nom (toff)	200 ns
Gate Charge	125nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	25ns/130ns
Switching Energy	1.3mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	RoHS Compliant