NGTB30N135IHR1WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
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NGTB30N135IHR1WG Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
5 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2015
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
394W
Input Type
Standard
Power - Max
394W
Collector Emitter Voltage (VCEO)
3V
Max Collector Current
60A
Collector Emitter Breakdown Voltage
1.35kV
Voltage - Collector Emitter Breakdown (Max)
1350V
Test Condition
600V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
3V @ 15V, 30A
IGBT Type
Trench Field Stop
Gate Charge
220nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
-/200ns
Switching Energy
630μA (off)
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.799150
$5.79915
10
$5.470896
$54.70896
100
$5.161223
$516.1223
500
$4.869078
$2434.539
1000
$4.593470
$4593.47
NGTB30N135IHR1WG Product Details
NGTB30N135IHR1WG Description
The NGTB30N135IHR1WG is a 1350v IGBT with a monolithic free wheeling diode. This insulated gate bipolar transistor(IGBT) NGTB30N135IHR1WG features a robust and cost-effective field stop trench construction, provides superior performance in demanding switching applications, and offers low on-state voltage with minimal switching losses. The IGBT NGTB30N135IHR1WG is well suited for resonant or soft switching applications.
NGTB30N135IHR1WG Features
Extremely Efficient Trench with Field Stop Technology