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STGP30H60DFB

STGP30H60DFB

STGP30H60DFB

STMicroelectronics

STGP30H60DFB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGP30H60DFB Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 260W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGP30
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 260W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 60A
Reverse Recovery Time 53 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Turn On Time 51.1 ns
Test Condition 400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
Turn Off Time-Nom (toff) 223 ns
IGBT Type Trench Field Stop
Gate Charge 149nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 37ns/146ns
Switching Energy 383μJ (on), 293μJ (off)
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.407040 $0.40704
10 $0.384000 $3.84
100 $0.362264 $36.2264
500 $0.341759 $170.8795
1000 $0.322414 $322.414
STGP30H60DFB Product Details

Description


The STGP30H60DFB is a Trench gate field-stop 600 V, 30 A HB series IGBT with a trench gate field-stop. These IGBTs were created employing a cutting-edge unique trench gate field stop construction. These devices are part of the new HB series of IGBTs, which offer the best balance of conduction and switching loss for maximum frequency converter efficiency. In addition, the slightly positive VCE(sat) temperature coefficient and extremely tight parameter distribution make paralleling safer.



Features


? Tight parameter distribution

? Safe paralleling

? Positive VCE(sat) temperature coefficient

? Low thermal resistance

? Very fast soft recovery antiparallel diode

? Maximum junction temperature: TJ = 175 °C

? High speed switching series

? Minimized tail current

? Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A



Applications


? Photovoltaic inverters

? High frequency converters

? SMPS

? UPS

? AC and DC motor drives offering speed control

? Chopper and inverters


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