STGP30H60DFB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
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STGP30H60DFB Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
260W
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STGP30
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
260W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
60A
Reverse Recovery Time
53 ns
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Turn On Time
51.1 ns
Test Condition
400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 30A
Turn Off Time-Nom (toff)
223 ns
IGBT Type
Trench Field Stop
Gate Charge
149nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
37ns/146ns
Switching Energy
383μJ (on), 293μJ (off)
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.407040
$0.40704
10
$0.384000
$3.84
100
$0.362264
$36.2264
500
$0.341759
$170.8795
1000
$0.322414
$322.414
STGP30H60DFB Product Details
Description
The STGP30H60DFB is a Trench gate field-stop 600 V, 30 A HB series IGBT with a trench gate field-stop. These IGBTs were created employing a cutting-edge unique trench gate field stop construction. These devices are part of the new HB series of IGBTs, which offer the best balance of conduction and switching loss for maximum frequency converter efficiency. In addition, the slightly positive VCE(sat) temperature coefficient and extremely tight parameter distribution make paralleling safer.
Features
? Tight parameter distribution
? Safe paralleling
? Positive VCE(sat) temperature coefficient
? Low thermal resistance
? Very fast soft recovery antiparallel diode
? Maximum junction temperature: TJ = 175 °C
? High speed switching series
? Minimized tail current
? Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A