SKW30N60FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
SKW30N60FKSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
18 Weeks
Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
LOW CONDUCTION LOSS
Max Power Dissipation
250W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
*KW30N60
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Voltage
600V
Element Configuration
Single
Current
40A
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
250W
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
41A
Reverse Recovery Time
400 ns
JEDEC-95 Code
TO-247AC
Collector Emitter Breakdown Voltage
600V
Turn On Time
78 ns
Test Condition
400V, 30A, 11 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 30A
Turn Off Time-Nom (toff)
391 ns
IGBT Type
NPT
Gate Charge
140nC
Current - Collector Pulsed (Icm)
112A
Td (on/off) @ 25°C
44ns/291ns
Switching Energy
1.29mJ
Height
20.95mm
Length
15.9mm
Width
5.3mm
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.114720
$5.11472
10
$4.825208
$48.25208
100
$4.552083
$455.2083
500
$4.294418
$2147.209
1000
$4.051337
$4051.337
SKW30N60FKSA1 Product Details
SKW30N60FKSA1 Description
SKW30N60FKSA1 is a single IGBT with a break down voltage of 600V from Infineon Technologies. SKW30N60FKSA1 operates between -55°C~150°C TJ, and its maximum collector current is 20A. The SKW30N60FKSA1 has three pins and it is available in Tape & Reel (TR) packaging way. SKW30N60FKSA1 has a 600V Voltage - Collector Emitter Breakdown (Max) value.
SKW30N60FKSA1 Features
75% lower Eoff compared to previous generation combined with low conduction losses
Short circuit withstand time – 10 s
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Very soft, fast recovery anti-parallel Emitter Controlled Diode
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1 for target applications