SMBTA06E6433HTMA1 Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.An input voltage of 80V volts is the breakdown voltage.A maximum collector current of 500mA volts is possible.

SMBTA06E6433HTMA1 Features

the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz

SMBTA06E6433HTMA1 Applications

There are a lot of Infineon Technologies SMBTA06E6433HTMA1 applications of single BJT transistors.

• Driver
• Inverter
• Interface
• Muting