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SS8050CBU

SS8050CBU

SS8050CBU

ON Semiconductor

SS8050CBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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SS8050CBU Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 179mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 25V
Max Power Dissipation 1W
Terminal Position BOTTOM
Current Rating 1.5A
Frequency 100MHz
Base Part Number SS8050
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Transistor Application AMPLIFIER
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 80mA, 800mA
Collector Emitter Breakdown Voltage 25V
Transition Frequency 190MHz
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 6V
hFE Min 85
Height 4.58mm
Length 4.58mm
Width 3.86mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.29000 $0.29
10 $0.24100 $2.41
100 $0.12880 $12.88
500 $0.08538 $42.69
1,000 $0.05867 $0.05867
SS8050CBU Product Details

SS8050CBU Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 100mA 1V.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 80mA, 800mA.The base voltage of the emitter can be kept at 6V to achieve high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1.5A current rating.In this part, there is a transition frequency of 190MHz.The maximum collector current is 1.5A volts.

SS8050CBU Features


the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 190MHz

SS8050CBU Applications


There are a lot of ON Semiconductor SS8050CBU applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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