SS8050CBU Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 100mA 1V.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 80mA, 800mA.The base voltage of the emitter can be kept at 6V to achieve high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1.5A current rating.In this part, there is a transition frequency of 190MHz.The maximum collector current is 1.5A volts.

SS8050CBU Features

the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 190MHz

SS8050CBU Applications

There are a lot of ON Semiconductor SS8050CBU applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter