2N5550TFR Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 60 @ 10mA 5V.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.A VCE saturation (Max) of 250mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).With the emitter base voltage set at 6V, an efficient operation can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 600mA.In this part, there is a transition frequency of 100MHz.An input voltage of 140V volts is the breakdown voltage.Maximum collector currents can be below 600mA volts.
2N5550TFR Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
2N5550TFR Applications
There are a lot of ON Semiconductor 2N5550TFR applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
