DCP53-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DCP53-13 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Package / Case
SOT-223
Number of Pins
4
Weight
7.994566mg
Packaging
Tape & Reel (TR)
Published
2011
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Polarity
PNP
Element Configuration
Single
Gain Bandwidth Product
200MHz
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
1A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
-500mV
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
-100V
Emitter Base Voltage (VEBO)
-5V
hFE Min
25
Continuous Collector Current
-1A
Height
1.6mm
Length
6.5mm
Width
3.5mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.065279
$4.065279
10
$3.835169
$38.35169
100
$3.618084
$361.8084
500
$3.413287
$1706.6435
1000
$3.220082
$3220.082
DCP53-13 Product Details
DCP53-13 Overview
A collector emitter saturation voltage of -500mV allows maximum design flexibility.Continuous collector voltages of -1A should be maintained to achieve high efficiency.The emitter base voltage can be kept at -5V for high efficiency.200MHz is present in the transition frequency.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
DCP53-13 Features
a collector emitter saturation voltage of -500mV the emitter base voltage is kept at -5V a transition frequency of 200MHz
DCP53-13 Applications
There are a lot of Diodes Incorporated DCP53-13 applications of single BJT transistors.