PMZ1000UN,315

new-10%

Manufacturer part number:PMZ1000UN,315

Manufacturer:Nexperia USA Inc.

Description:N-Channel 30 V 1 Ohm 0.89 nC SMT TrenchMOS standard level FET - SOT-883

Case Package:SOT-23

Datasheet:PMZ1000UN,315 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mounting Type	Surface Mount
Package / Case	SC-101, SOT-883
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	350mW Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	350mW
Case Connection	DRAIN
Turn On Delay Time	4 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1 Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	43pF @ 25V
Current - Continuous Drain (Id) @ 25°C	480mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.89nC @ 4.5V
Rise Time	7.5ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	4.5 ns
Turn-Off Delay Time	18 ns
Continuous Drain Current (ID)	480mA
Gate to Source Voltage (Vgs)	8V
Max Dual Supply Voltage	30V
Drain Current-Max (Abs) (ID)	0.48A
Drain-source On Resistance-Max	1Ohm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant