SPW35N60C3FKSA1 Overview

Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4500pF @ 25V.34.6A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 103.8A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 600V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 650V.Using drive voltage (10V) reduces this device's overall power consumption.

SPW35N60C3FKSA1 Features

the avalanche energy rating (Eas) is 1500 mJ
based on its rated peak drain current 103.8A.
a 650V drain to source voltage (Vdss)

SPW35N60C3FKSA1 Applications

There are a lot of Infineon Technologies
SPW35N60C3FKSA1 applications of single MOSFETs transistors.

• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification