IXBT42N170A

new-10%

Manufacturer part number:IXBT42N170A

Manufacturer:IXYS

Description:Trans IGBT Chip N-CH 1.7KV 42A 3-Pin(2+Tab) TO-268

Case Package:SOT-23

Datasheet:IXBT42N170A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Surface Mount, Through Hole
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
Series	BIMOSFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	PURE TIN
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	357W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXB*42N170
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	357W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.7kV
Max Collector Current	42A
Reverse Recovery Time	330 ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1700V
Collector Emitter Saturation Voltage	5.2V
Max Breakdown Voltage	1.7kV
Turn On Time	63 ns
Test Condition	850V, 21A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic	6V @ 15V, 21A
Turn Off Time-Nom (toff)	420 ns
Gate Charge	188nC
Current - Collector Pulsed (Icm)	265A
Td (on/off) @ 25°C	19ns/200ns
Switching Energy	3.43mJ (on), 430μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
RoHS Status	ROHS3 Compliant