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RGT50TS65DGC11

RGT50TS65DGC11

RGT50TS65DGC11

ROHM Semiconductor

IGBT 650V 48A 174W TO-247N

SOT-23

RGT50TS65DGC11 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2014
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 174W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Input Type Standard
Power - Max 174W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 48A
Reverse Recovery Time 58 ns
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.65V
Turn On Time 65 ns
Test Condition 400V, 25A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 25A
Continuous Collector Current 25A
Turn Off Time-Nom (toff) 210 ns
IGBT Type Trench Field Stop
Gate Charge 49nC
Current - Collector Pulsed (Icm) 75A
Td (on/off) @ 25°C 27ns/88ns
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.704400 $3.7044
10 $3.494717 $34.94717
100 $3.296903 $329.6903
500 $3.110286 $1555.143
1000 $2.934232 $2934.232

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