SI2311DS-T1-GE3

new-10%

Manufacturer part number:SI2311DS-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 8V 3A SOT23

Case Package:SOT-23

Datasheet:SI2311DS-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Supplier Device Package	SOT-23-3
Weight	1.437803g
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	710mW Ta
Element Configuration	Single
Turn On Delay Time	18 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	45mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	970pF @ 4V
Current - Continuous Drain (Id) @ 25°C	3A Ta
Gate Charge (Qg) (Max) @ Vgs	12nC @ 4.5V
Rise Time	45ns
Drain to Source Voltage (Vdss)	8V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	45 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	-3A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-8V
Input Capacitance	970pF
Drain to Source Resistance	45mOhm
Rds On Max	45 mΩ
Height	1.02mm
Length	3.04mm
Width	1.4mm
RoHS Status	ROHS3 Compliant