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SI2311DS-T1-GE3

SI2311DS-T1-GE3

SI2311DS-T1-GE3

Vishay Siliconix

MOSFET P-CH 8V 3A SOT23

SOT-23

SI2311DS-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Supplier Device Package SOT-23-3
Weight 1.437803g
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 710mW Ta
Element Configuration Single
Turn On Delay Time 18 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 45mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 970pF @ 4V
Current - Continuous Drain (Id) @ 25°C 3A Ta
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Rise Time 45ns
Drain to Source Voltage (Vdss) 8V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 45 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) -3A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -8V
Input Capacitance 970pF
Drain to Source Resistance 45mOhm
Rds On Max 45 mΩ
Height 1.02mm
Length 3.04mm
Width 1.4mm
RoHS Status ROHS3 Compliant

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