DMN6140L-13

new-10%

DMN6140L-13

Manufacturer part number:DMN6140L-13

Manufacturer:Diodes Incorporated

Description:DMN6140L-13 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available on our website

Case Package:SOT-23

Datasheet:DMN6140L-13 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
HTS Code	8541.29.00.95
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	DMN6140
Reference Standard	AEC-Q101
JESD-30 Code	R-PDSO-G3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	700mW Ta
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	140m Ω @ 1.8A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	315pF @ 40V
Current - Continuous Drain (Id) @ 25°C	1.6A Ta
Gate Charge (Qg) (Max) @ Vgs	8.6nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	1.6A
Drain-source On Resistance-Max	0.14Ohm
DS Breakdown Voltage-Min	60V
RoHS Status	ROHS3 Compliant