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STE145N65M5

STE145N65M5

STE145N65M5

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tube 15m Ω @ 69A, 10V ±25V 18500pF @ 100V 414nC @ 10V ISOTOP

SOT-23

STE145N65M5 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 12 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case ISOTOP
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh™ V
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 12mOhm
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STE1
Power Dissipation-Max 679W Tc
Element Configuration Single
FET Type N-Channel
Rds On (Max) @ Id, Vgs 15m Ω @ 69A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 18500pF @ 100V
Current - Continuous Drain (Id) @ 25°C 143A Tc
Gate Charge (Qg) (Max) @ Vgs 414nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Continuous Drain Current (ID) 143A
Drain to Source Breakdown Voltage 650V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $67.32000 $67.32
10 $63.36000 $633.6
100 $56.62800 $5662.8
STE145N65M5 Product Details

STE145N65M5 Description


The component in question is an N-channel Power MOSFET built using the cutting-edge MDmeshTM M5 vertical manufacturing technology and the well-known PowerMESHTM horizontal architecture. Due to its extremely low on-resistance, the resulting product is especially well suited for applications that call for great power and superior efficiency.



STE145N65M5 Features


  • Extremely low RDS(on)

  • Low gate charge and input capacitance

  • Excellent switching performance

  • 100% avalanche tested



STE145N65M5 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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