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IXFP7N80PM

IXFP7N80PM

IXFP7N80PM

IXYS

MOSFET N-CH 800V 3.5A TO-220

SOT-23

IXFP7N80PM Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
Series HiPerFET™, PolarHT™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 50W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 50W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.44 Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1890pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.5A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 3.5A
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage 800V
Avalanche Energy Rating (Eas) 300 mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
50 $2.20000 $110

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