IXFP7N80PM

new-10%

Manufacturer part number:IXFP7N80PM

Manufacturer:IXYS

Description:MOSFET N-CH 800V 3.5A TO-220

Case Package:SOT-23

Datasheet:IXFP7N80PM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Series	HiPerFET™, PolarHT™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	50W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	50W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.44 Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1890pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3.5A Tc
Gate Charge (Qg) (Max) @ Vgs	32nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	3.5A
JEDEC-95 Code	TO-220AB
Drain to Source Breakdown Voltage	800V
Avalanche Energy Rating (Eas)	300 mJ
RoHS Status	ROHS3 Compliant