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IXFK300N20X3

  • IXFK300N20X3
  • IXFK300N20X3

IXFK300N20X3

IXFK300N20X3

IXYS

MOSFET (Metal Oxide) N-Channel Tube 4m Ω @ 150A, 10V ±20V 23800pF @ 25V 375nC @ 10V 200V TO-264-3, TO-264AA

SOT-23

IXFK300N20X3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 19 Weeks
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1250W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4m Ω @ 150A, 10V
Vgs(th) (Max) @ Id 4.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 23800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 300A Tc
Gate Charge (Qg) (Max) @ Vgs 375nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $22.80000 $22.8
25 $19.38000 $484.5
100 $18.01200 $1801.2
500 $15.96000 $7980
IXFK300N20X3 Product Details

IXFK300N20X3 Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 23800pF @ 25V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFK300N20X3 Features


a 200V drain to source voltage (Vdss)


IXFK300N20X3 Applications


There are a lot of IXYS
IXFK300N20X3 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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