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FQI11P06TU

FQI11P06TU

FQI11P06TU

ON Semiconductor

MOSFET P-CH 60V 11.4A I2PAK

SOT-23

FQI11P06TU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package I2PAK (TO-262)
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.13W Ta 53W Tc
FET Type P-Channel
Rds On (Max) @ Id, Vgs 175mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11.4A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.552416 $2.552416
10 $2.407939 $24.07939
100 $2.271641 $227.1641
500 $2.143057 $1071.5285
1000 $2.021752 $2021.752

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