APT7M120B

new-10%

Manufacturer part number:APT7M120B

Manufacturer:Microsemi Corporation

Description:Trans MOSFET N-CH 1.2KV 8A 3-Pin(3+Tab) TO-247

Case Package:SOT-23

Datasheet:APT7M120B Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 1 month ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1997
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Voltage - Rated DC	1.2kV
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Current Rating	7.1A
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	335W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	335W
Turn On Delay Time	14 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.5 Ω @ 3A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2565pF @ 25V
Current - Continuous Drain (Id) @ 25°C	8A Tc
Gate Charge (Qg) (Max) @ Vgs	80nC @ 10V
Rise Time	8ns
Drain to Source Voltage (Vdss)	1200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	8A
JEDEC-95 Code	TO-247AB
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	7A
Avalanche Energy Rating (Eas)	575 mJ
Height	5.31mm
Length	21.46mm
Width	16.26mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free