AUIRFN7107TR

new-10%

Manufacturer part number:AUIRFN7107TR

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 75V 75A 8PQFN

Case Package:SOT-23

Datasheet:AUIRFN7107TR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	11 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	8.5mOhm
Additional Feature	ULTRA LOW RESISTANCE
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	4.4W Ta 125W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.5m Ω @ 45A, 10V
Vgs(th) (Max) @ Id	4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	3001pF @ 25V
Current - Continuous Drain (Id) @ 25°C	14A Ta 75A Tc
Gate Charge (Qg) (Max) @ Vgs	77nC @ 10V
Rise Time	12ns
Drain to Source Voltage (Vdss)	75V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	7 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	14A
Gate to Source Voltage (Vgs)	20V
Pulsed Drain Current-Max (IDM)	300A
DS Breakdown Voltage-Min	75V
RoHS Status	RoHS Compliant