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FQA6N80

FQA6N80

FQA6N80

ON Semiconductor

MOSFET N-CH 800V 6.3A TO-3P

SOT-23

FQA6N80 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 185W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.95Ohm @ 3.15A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.3A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.008074 $1.008074
10 $0.951013 $9.51013
100 $0.897182 $89.7182
500 $0.846398 $423.199
1000 $0.798489 $798.489

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