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FQA6N80

FQA6N80

FQA6N80

ON Semiconductor

MOSFET N-CH 800V 6.3A TO-3P

SOT-23

FQA6N80 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2007
Series QFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 185W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.95Ohm @ 3.15A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.3A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
In-Stock:6124 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.008074$1.008074
10$0.951013$9.51013
100$0.897182$89.7182
500$0.846398$423.199
1000$0.798489$798.489

About FQA6N80

The FQA6N80 from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 800V 6.3A TO-3P.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FQA6N80, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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