IXTY01N100D

new-10%

Manufacturer part number:IXTY01N100D

Manufacturer:IXYS

Description:MOSFET N-CH 1000V 0.1A TO-252AA

Case Package:SOT-23

Datasheet:IXTY01N100D Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	110Ohm
Terminal Finish	Pure Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	1.1W Ta 25W Tc
Element Configuration	Single
Power Dissipation	1.1W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	110 Ω @ 50mA, 0V
Input Capacitance (Ciss) (Max) @ Vds	120pF @ 25V
Current - Continuous Drain (Id) @ 25°C	100mA Tc
Rise Time	6ns
Drain to Source Voltage (Vdss)	1000V
Vgs (Max)	±20V
Fall Time (Typ)	6 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	100mA
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	1kV
Pulsed Drain Current-Max (IDM)	0.4A
FET Feature	Depletion Mode
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free