FDFMJ2P023Z

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Manufacturer part number:FDFMJ2P023Z

Manufacturer:ON Semiconductor

Description:MOSFET P-CH 20V 2.9A 6MLP

Case Package:SOT-23

Datasheet:FDFMJ2P023Z Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-WFDFN Exposed Pad
Number of Pins	6
Supplier Device Package	SC-75, MicroFET
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	PowerTrench®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	1.4W Ta
Element Configuration	Single
Power Dissipation	1.4W
Turn On Delay Time	5 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	112mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	400pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.9A Ta
Gate Charge (Qg) (Max) @ Vgs	6.5nC @ 4.5V
Rise Time	4ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	4 ns
Turn-Off Delay Time	23 ns
Continuous Drain Current (ID)	2.9A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	20V
Input Capacitance	400pF
FET Feature	Schottky Diode (Isolated)
Drain to Source Resistance	112mOhm
Rds On Max	112 mΩ
Radiation Hardening	No
RoHS Status	RoHS Compliant