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FDFMJ2P023Z

FDFMJ2P023Z

FDFMJ2P023Z

ON Semiconductor

MOSFET P-CH 20V 2.9A 6MLP

SOT-23

FDFMJ2P023Z Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-WFDFN Exposed Pad
Number of Pins 6
Supplier Device Package SC-75, MicroFET
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series PowerTrench®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 1.4W Ta
Element Configuration Single
Power Dissipation 1.4W
Turn On Delay Time 5 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 112mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.9A Ta
Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 4.5V
Rise Time 4ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 2.9A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
Input Capacitance 400pF
FET Feature Schottky Diode (Isolated)
Drain to Source Resistance 112mOhm
Rds On Max 112 mΩ
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.30000 $0.3
500 $0.297 $148.5
1000 $0.294 $294
1500 $0.291 $436.5
2000 $0.288 $576
2500 $0.285 $712.5

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