Welcome to Hotenda.com Online Store!

logo
userjoin
Home

APT56M50B2

APT56M50B2

APT56M50B2

Microsemi Corporation

MOSFET N-CH 500V 56A T-MAX

SOT-23

APT56M50B2 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish PURE MATTE TIN
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Current Rating 56A
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 780W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 780W
Case Connection DRAIN
Turn On Delay Time 38 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 28A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 8800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 56A Tc
Gate Charge (Qg) (Max) @ Vgs 220nC @ 10V
Rise Time 45ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 33 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 56A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Height 5.31mm
Length 21.46mm
Width 16.26mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
47 $10.13319 $476.25993

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News