APT56M50B2

new-10%

Manufacturer part number:APT56M50B2

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 500V 56A T-MAX

Case Package:SOT-23

Datasheet:APT56M50B2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 3 weeks ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1997
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	PURE MATTE TIN
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Current Rating	56A
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	780W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	780W
Case Connection	DRAIN
Turn On Delay Time	38 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	100m Ω @ 28A, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds	8800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	56A Tc
Gate Charge (Qg) (Max) @ Vgs	220nC @ 10V
Rise Time	45ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	33 ns
Turn-Off Delay Time	100 ns
Continuous Drain Current (ID)	56A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	500V
Height	5.31mm
Length	21.46mm
Width	16.26mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free