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IXTK20N150

IXTK20N150

IXTK20N150

IXYS

MOSFET N-CH 1500V 20A TO-264

SOT-23

IXTK20N150 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Reach Compliance Code unknown
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1250W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1 Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 7800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 215nC @ 10V
Drain to Source Voltage (Vdss) 1500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 20A
Drain-source On Resistance-Max 1Ohm
Pulsed Drain Current-Max (IDM) 50A
DS Breakdown Voltage-Min 1500V
Avalanche Energy Rating (Eas) 2500 mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $20.155854 $20.155854
10 $19.014957 $190.14957
100 $17.938639 $1793.8639
500 $16.923244 $8461.622
1000 $15.965324 $15965.324

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