IXFR230N20T

new-10%

Manufacturer part number:IXFR230N20T

Manufacturer:IXYS

Description:MOSFET N-CH 200V 156A ISOPLUS247

Case Package:SOT-23

Datasheet:IXFR230N20T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2011
Series	GigaMOS™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, UL RECOGNIZED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Reach Compliance Code	unknown
Pin Count	3
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	600W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8m Ω @ 60A, 10V
Vgs(th) (Max) @ Id	5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	28000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	156A Tc
Gate Charge (Qg) (Max) @ Vgs	378nC @ 10V
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	156A
Drain-source On Resistance-Max	0.008Ohm
Pulsed Drain Current-Max (IDM)	630A
DS Breakdown Voltage-Min	200V
Avalanche Energy Rating (Eas)	3000 mJ
RoHS Status	ROHS3 Compliant