IXGA16N60C2D1

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Manufacturer part number:IXGA16N60C2D1

Manufacturer:IXYS

Description:IGBT 600V 40A 150W TO263

Case Package:SOT-23

Datasheet:IXGA16N60C2D1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight	1.59999g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
Series	HiPerFAST™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Pure Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	150W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*16N60
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	150W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	40A
Reverse Recovery Time	30ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	3V
Turn On Time	43 ns
Test Condition	400V, 12A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 12A
Turn Off Time-Nom (toff)	190 ns
IGBT Type	PT
Gate Charge	25nC
Current - Collector Pulsed (Icm)	100A
Td (on/off) @ 25°C	16ns/75ns
Switching Energy	160μJ (on), 90μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
RoHS Status	RoHS Compliant