IXGA36N60A3

new-10%

Manufacturer part number:IXGA36N60A3

Manufacturer:IXYS

Description:IGBT

Case Package:SOT-23

Datasheet:IXGA36N60A3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Published	2013
Series	GenX3™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	2
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	220W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Reverse Recovery Time	23ns
Voltage - Collector Emitter Breakdown (Max)	600V
Power Dissipation-Max (Abs)	220W
Turn On Time	43 ns
Test Condition	400V, 30A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.4V @ 15V, 30A
Turn Off Time-Nom (toff)	1000 ns
IGBT Type	PT
Gate Charge	80nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	18ns/330ns
Switching Energy	740μJ (on), 3mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
RoHS Status	Non-RoHS Compliant