IXGH32N120A3

new-10%

Manufacturer part number:IXGH32N120A3

Manufacturer:IXYS

Description:IGBT 1200V 75A 300W TO247

Case Package:SOT-23

Datasheet:IXGH32N120A3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.500007g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Series	GenX3™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	300W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	300W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	75A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.35V
Input Capacitance	2.15nF
Turn On Time	239 ns
Vce(on) (Max) @ Vge, Ic	2.35V @ 15V, 32A
Turn Off Time-Nom (toff)	1380 ns
IGBT Type	PT
Gate Charge	89nC
Current - Collector Pulsed (Icm)	230A
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free