Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Number of Pins	3
Weight	10.000011g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
Series	GenX3™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	TIN SILVER COPPER
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	830W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	830W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	40 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	490 ns
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	240A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	1.85V
Turn On Time	105 ns
Test Condition	960V, 100A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 100A
Turn Off Time-Nom (toff)	1365 ns
IGBT Type	PT
Gate Charge	420nC
Current - Collector Pulsed (Icm)	600A
Td (on/off) @ 25°C	40ns/490ns
Switching Energy	10mJ (on), 33mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

IXGK120N120A3

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