IXXR100N60B3H1

new-10%

Manufacturer part number:IXXR100N60B3H1

Manufacturer:IXYS

Description:IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT

Case Package:SOT-23

Datasheet:IXXR100N60B3H1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Packaging	Tube
Published	2013
Series	GenX3™, XPT™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	AVALANCHE RATED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	400W
Terminal Position	SINGLE
Pin Count	3
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation	400W
Case Connection	ISOLATED
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.8V
Max Collector Current	145A
Reverse Recovery Time	140 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.5V
Turn On Time	92 ns
Test Condition	360V, 70A, 2 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 70A
Turn Off Time-Nom (toff)	350 ns
IGBT Type	PT
Gate Charge	143nC
Current - Collector Pulsed (Icm)	440A
Td (on/off) @ 25°C	30ns/120ns
Switching Energy	1.9mJ (on), 2mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free