Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	HIGH SPEED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	100W
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*12N100
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	100W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	3.5V
Max Collector Current	24A
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	1kV
Voltage - Collector Emitter Breakdown (Max)	1000V
Turn On Time	100 ns
Test Condition	800V, 12A, 120 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.5V @ 15V, 12A
Turn Off Time-Nom (toff)	900 ns
Gate Charge	65nC
Current - Collector Pulsed (Icm)	48A
Td (on/off) @ 25°C	100ns/850ns
Switching Energy	2.5mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Fall Time-Max (tf)	700ns
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
50	$3.07120	$153.56

IXGP12N100

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