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IXSH40N60A

IXSH40N60A

IXSH40N60A

IXYS

IGBT 600V 75A 300W TO247AD

SOT-23

IXSH40N60A Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.500007g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1996
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
Additional Feature HIGH SPEED
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 300W
Current Rating 75A
Base Part Number IXS*40N60
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 170ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 75A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Turn On Time 225 ns
Test Condition 480V, 40A, 2.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 40A
Turn Off Time-Nom (toff) 600 ns
Gate Charge 190nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 55ns/400ns
Switching Energy 2.5mJ (off)
Gate-Emitter Voltage-Max 20V
VCEsat-Max 3 V
Gate-Emitter Thr Voltage-Max 7V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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