IXGP20N120B3

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Manufacturer part number:IXGP20N120B3

Manufacturer:IXYS

Description:IXGP20N120B3 datasheet pdf and Transistors - IGBTs - Single product details from IXYS stock available on our website

Case Package:SOT-23

Datasheet:IXGP20N120B3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	2.299997g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
Series	GenX3™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	PURE TIN
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	180W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*20N120
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	180W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	3.1V
Max Collector Current	36A
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	61 ns
Test Condition	600V, 16A, 15 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.1V @ 15V, 16A
Turn Off Time-Nom (toff)	720 ns
IGBT Type	PT
Gate Charge	51nC
Current - Collector Pulsed (Icm)	80A
Td (on/off) @ 25°C	16ns/150ns
Switching Energy	920μJ (on), 560μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Height	16mm
Length	10.66mm
Width	4.83mm
RoHS Status	ROHS3 Compliant