STGWA60V60DF             Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

STGWA60V60DF             Features

? Maximum junction temperature: TJ = 175 °C

? Tail-less switching off

? VCE(sat) = 1.85 V (typ.) @ IC = 60 A

? Tight parameter distribution

? Safe paralleling

? Low thermal resistance

? Very fast soft recovery antiparallel diode

STGWA60V60DF             Applications

? Photovoltaic inverters

? Uninterruptible power supply

? Welding

? Power factor correction

? Very high frequency converters