IXGP24N60C4D1

new-10%

Manufacturer part number:IXGP24N60C4D1

Manufacturer:IXYS

Description:IGBT 600V 56A 190W TO220

Case Package:SOT-23

Datasheet:IXGP24N60C4D1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	TIN SILVER COPPER
Additional Feature	ULTRA FAST
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	190W
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	190W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.7V
Max Collector Current	56A
Reverse Recovery Time	30 ns
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Turn On Time	52 ns
Test Condition	360V, 24A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 24A
Turn Off Time-Nom (toff)	263 ns
IGBT Type	PT
Gate Charge	64nC
Current - Collector Pulsed (Icm)	130A
Td (on/off) @ 25°C	22ns/192ns
Switching Energy	350μJ (on), 340μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	RoHS Compliant