Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS247™
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2004
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	120W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*16N170
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Polarity	NPN
Element Configuration	Single
Power Dissipation	120W
Case Connection	ISOLATED
Input Type	Standard
Transistor Application	POWER CONTROL
Rise Time	40ns
Collector Emitter Voltage (VCEO)	1.7kV
Max Collector Current	16A
Reverse Recovery Time	150 ns
Collector Emitter Breakdown Voltage	1.7kV
Voltage - Collector Emitter Breakdown (Max)	1700V
Collector Emitter Saturation Voltage	4.2V
Turn On Time	97 ns
Test Condition	850V, 16A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	5V @ 15V, 8A
Turn Off Time-Nom (toff)	255 ns
Gate Charge	65nC
Current - Collector Pulsed (Icm)	40A
Td (on/off) @ 25°C	36ns/200ns
Switching Energy	900μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant

IXGR16N170AH1

Related Part Number