NGTB75N60FL2WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
NGTB75N60FL2WG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 2 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
595W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Element Configuration
Single
Input Type
Standard
Power - Max
595W
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
100A
Reverse Recovery Time
80 ns
Collector Emitter Breakdown Voltage
600V
Test Condition
400V, 75A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 75A
IGBT Type
Trench Field Stop
Gate Charge
310nC
Current - Collector Pulsed (Icm)
200A
Td (on/off) @ 25°C
110ns/270ns
Switching Energy
1.5mJ (on), 1mJ (off)
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.036960
$4.03696
10
$3.808453
$38.08453
100
$3.592880
$359.288
500
$3.389509
$1694.7545
1000
$3.197650
$3197.65
NGTB75N60FL2WG Product Details
NGTB75N60FL2WG Description
NGTB75N60FL2WG Insulated Gate Bipolar Transistor (IGBT) offers outstanding performance in demanding switching applications, offering both low on state voltage and little switching loss. It is constructed with a reliable and cost-effective Field Stop (FS) Trench.
NGTB75N60FL2WG Features
TJmax = 175°C
5 ms Short?Circuit Capability
Soft Fast Reverse Recovery Diode
These are Pb?Free DevicesTypical
Optimized for High Speed Switching
Extremely Efficient Trench with Field Stop Technology