IXGR35N120B

new-10%

Manufacturer part number:IXGR35N120B

Manufacturer:IXYS

Description:IGBT 1200V 70A 200W ISOPLUS247

Case Package:SOT-23

Datasheet:IXGR35N120B Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS247™
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2001
Series	HiPerFAST™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	200W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*35N120
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Polarity	NPN
Element Configuration	Single
Power Dissipation	200W
Case Connection	ISOLATED
Input Type	Standard
Transistor Application	POWER CONTROL
Rise Time	160ns
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	70A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	3.3V
Turn On Time	86 ns
Test Condition	960V, 35A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.3V @ 15V, 35A
Turn Off Time-Nom (toff)	660 ns
IGBT Type	PT
Gate Charge	170nC
Current - Collector Pulsed (Icm)	140A
Td (on/off) @ 25°C	50ns/180ns
Switching Energy	3.8mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant