IXGT32N90B2D1

new-10%

Manufacturer part number:IXGT32N90B2D1

Manufacturer:IXYS

Description:Trans IGBT Chip N-CH 900V 64A 3-Pin(2+Tab) TO-268

Case Package:SOT-23

Datasheet:IXGT32N90B2D1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Weight	4.500005g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2005
Series	HiPerFAST™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Max Power Dissipation	300W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*32N90
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	300W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	900V
Max Collector Current	64A
Reverse Recovery Time	190 ns
Collector Emitter Breakdown Voltage	900V
Turn On Time	42 ns
Test Condition	720V, 32A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 32A
Turn Off Time-Nom (toff)	690 ns
Gate Charge	89nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	20ns/260ns
Switching Energy	2.2mJ (off)
RoHS Status	ROHS3 Compliant