IXGT40N60C2D1

new-10%

Manufacturer part number:IXGT40N60C2D1

Manufacturer:IXYS

Description:Trans IGBT Chip N-CH 600V 75A 3-Pin(2+Tab) TO-268

Case Package:SOT-23

Datasheet:IXGT40N60C2D1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Weight	4.500005g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
Series	HiPerFAST™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	300W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*40N60
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	300W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	75A
Reverse Recovery Time	25 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.5V
Turn On Time	38 ns
Test Condition	400V, 30A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 30A
Turn Off Time-Nom (toff)	210 ns
IGBT Type	PT
Gate Charge	95nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	18ns/90ns
Switching Energy	200μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	RoHS Compliant