IXGT60N60C3D1

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Manufacturer part number:IXGT60N60C3D1

Manufacturer:IXYS

Description:IGBT 600V 75A 380W TO268

Case Package:SOT-23

Datasheet:IXGT60N60C3D1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	19 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
Series	GenX3™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	PURE TIN
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	380W
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*60N60
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	380W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.5V
Max Collector Current	75A
Reverse Recovery Time	25 ns
Collector Emitter Breakdown Voltage	600V
Turn On Time	64 ns
Test Condition	480V, 40A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 40A
Turn Off Time-Nom (toff)	226 ns
IGBT Type	PT
Gate Charge	115nC
Current - Collector Pulsed (Icm)	300A
Td (on/off) @ 25°C	21ns/70ns
Switching Energy	800μJ (on), 450μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Fall Time-Max (tf)	95ns
RoHS Status	ROHS3 Compliant