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IXGX120N60A3

IXGX120N60A3

IXGX120N60A3

IXYS

IGBT 600V 200A 780W PLUS247

SOT-23

IXGX120N60A3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series GenX3™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 780W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*120N60
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 780W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 200A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.2V
Turn On Time 123 ns
Test Condition 480V, 100A, 1.5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.35V @ 15V, 100A
Turn Off Time-Nom (toff) 830 ns
IGBT Type PT
Gate Charge 450nC
Current - Collector Pulsed (Icm) 600A
Td (on/off) @ 25°C 39ns/295ns
Switching Energy 2.7mJ (on), 6.6mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $86.900640 $86.90064
10 $81.981736 $819.81736
100 $77.341260 $7734.126
500 $72.963453 $36481.7265
1000 $68.833446 $68833.446

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