IXGX120N60A3

new-10%

Manufacturer part number:IXGX120N60A3

Manufacturer:IXYS

Description:IGBT 600V 200A 780W PLUS247

Case Package:SOT-23

Datasheet:IXGX120N60A3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
Series	GenX3™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	TIN SILVER COPPER
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	780W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*120N60
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	780W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	200A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.2V
Turn On Time	123 ns
Test Condition	480V, 100A, 1.5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.35V @ 15V, 100A
Turn Off Time-Nom (toff)	830 ns
IGBT Type	PT
Gate Charge	450nC
Current - Collector Pulsed (Icm)	600A
Td (on/off) @ 25°C	39ns/295ns
Switching Energy	2.7mJ (on), 6.6mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free