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STGD10NC60ST4

STGD10NC60ST4

STGD10NC60ST4

STMicroelectronics

STGD10NC60ST4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGD10NC60ST4 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Series PowerMESH™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 60W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGD10
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Input Type Standard
Power - Max 60W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 18A
Collector Emitter Breakdown Voltage 600V
Max Breakdown Voltage 600V
Turn On Time 22.5 ns
Test Condition 390V, 5A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.65V @ 15V, 5A
Turn Off Time-Nom (toff) 560 ns
Gate Charge 18nC
Current - Collector Pulsed (Icm) 25A
Td (on/off) @ 25°C 19ns/160ns
Switching Energy 60μJ (on), 340μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.574699 $5.574699
10 $5.259150 $52.5915
100 $4.961462 $496.1462
500 $4.680624 $2340.312
1000 $4.415684 $4415.684
STGD10NC60ST4 Product Details

STGD10NC60ST4 Description

 

STGD10NC60ST4 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes STGD10NC60ST4 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

 

 

STGD10NC60ST4 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

STGD10NC60ST4 Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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