FGPF7N60LSDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
FGPF7N60LSDTU Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2005
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
45W
Element Configuration
Single
Power Dissipation
45W
Input Type
Standard
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
14A
Reverse Recovery Time
65ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2V
Test Condition
300V, 7A, 470 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 7A
Gate Charge
24nC
Current - Collector Pulsed (Icm)
21A
Td (on/off) @ 25°C
120ns/410ns
Switching Energy
270μJ (on), 3.8mJ (off)
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.043200
$3.0432
10
$2.870943
$28.70943
100
$2.708437
$270.8437
500
$2.555129
$1277.5645
1000
$2.410499
$2410.499
FGPF7N60LSDTU Product Details
FGPF7N60LSDTU Description
Insulated Gate Bipolar Transistors (IGBTs) from Fairchild have very little conduction loss and switching loss. The gadget was made for lamp applications where a very low On-Voltage Drop was necessary.
FGPF7N60LSDTU Features
? Low saturation voltage: 1.4 V at 7 A for VCE(sat).