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IXSA20N60B2D1

IXSA20N60B2D1

IXSA20N60B2D1

IXYS

Trans IGBT Chip N-CH 600V 35A 3-Pin(3+Tab) TO-220AB

SOT-23

IXSA20N60B2D1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount, Through Hole
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.59999g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2009
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 600V
Max Power Dissipation 190W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 35A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXS*20N60
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 190W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 30ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 35A
Reverse Recovery Time 30 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V
Turn On Time 60 ns
Test Condition 480V, 16A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 16A
Turn Off Time-Nom (toff) 390 ns
IGBT Type PT
Gate Charge 33nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 30ns/116ns
Switching Energy 380μJ (off)
Height 9.15mm
Length 10.66mm
Width 4.82mm
RoHS Status RoHS Compliant
Lead Free Lead Free

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